View APTGF50TL60T3G_30150.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGF50TL60T3G
Three level inverter NPT IGBT Power Module VCES = 600V IC = 50A @ Tc = 80C
Application * Solar converter * Uninterruptible Power Supplies Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring
28 27 26 25 29 30 23 22 20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 ...
Q1 to Q4 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 65 50 230 20 250 100A @ 500V Unit V
March, 2009 1-8 APTGF50TL60T3G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF50TL60T3G
All ratings @ Tj = 25C unless otherwise specified Q1 to Q4 Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Unit A V V nA
1.7 4
2.0 2.2
Q1 to Q4 Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 VGE = 15V Tj = 125C VBus = 400V IC = 50A Tj = 125C RG = 2.7 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 mJ 1 225 0.5 A
C/W
Max
Unit pF
nC
ns
ns
www.microsemi.com
2-8
APTGF50TL60T3G - Rev 0
March, 2009
APTGF50TL60T3G
CR1 to CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V IF = 30A VR = 400V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Min 600 Typ Max 25 500 30 1.8 2.2 1.5 25 160 35 480 0.6 1.2 2.2 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 150 125 100 4.7 110
Unit V C N.m g
www.microsemi.com
3-8
APTGF50TL60T3G - Rev 0
March, 2009
APTGF50TL60T3G
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
4-8
APTGF50TL60T3G - Rev 0
March, 2009
17 12
28
APTGF50TL60T3G
Q1 to Q4 Typical performance curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
100 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
75
TJ=25C
75
TJ=25C
50
TJ=125C
50
TJ=125C
25
25
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 100 VGE, Gate to Emitter Voltage (V)
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 50A TJ = 25C VCE=120V VCE=300V VCE=480V
4
18
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
75
50
TJ=125C
25
TJ=25C
0 0 1 3 45 67 8 9 VGE, Gate to Emitter Voltage (V) 2 10
25
50
75
100 125 150 175 200
Gate Charge (nC) DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 25 50 75 100 125
70 60 50 40 30 20 10 0 25 50 75 100 125 150
TC, Case Temperature (C)
1.10
1.00
0.90
0.80 TJ, Junction Temperature (C)
www.microsemi.com
5-8
APTGF50TL60T3G - Rev 0
March, 2009
APTGF50TL60T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 60
VGE = 15V
Turn-Off Delay Time vs Collector Current 175 150 125 100 75 50 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7 VCE = 400V RG = 2.7 VGE=15V, TJ=125C
50
40
Tj = 125C VCE = 400V RG = 2.7
30
VGE=15V, TJ=25C
20 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 60 50
VCE = 400V RG = 2.7
60 50
tf, Fall Time (ns)
tr, Rise Time (ns)
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
VGE=15V, TJ=125C
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
TJ = 125C
TJ = 25C
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
2.5 2 1.5 1 0.5 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 2.7
1.5 1 0.5 0 0
VCE = 400V RG = 2.7
TJ=125C, VGE=15V
TJ = 125C
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 3 Switching Energy Losses (mJ) IC, Collector Current (A) 2.5 2 1.5
Eoff, 50A
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 120 100 80 60 40 20 0
VCE = 400V VGE = 15V TJ= 125C
Eon, 50A
1 0.5
Eon, 50A
0 0 5 10 15 20 Gate Resistance (Ohms) 25
0
200
400
600
VCE, Collector to Emitter Voltage (V)
www.microsemi.com
6-8
APTGF50TL60T3G - Rev 0
March, 2009
APTGF50TL60T3G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Operating Frequency vs Collector Current
240 200 160 120 80 40 0 0 20 40 60 80 100
IC, Collector Current (A)
hard switching VCE = 400V D = 50% RG = 2.7 TJ = 125C TC= 75C
Cies
1000
Coes Cres
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0 0.00001
www.microsemi.com
7-8
APTGF50TL60T3G - Rev 0
March, 2009
APTGF50TL60T3G
CR1 to CR6 Typical performance curve
Forward Characteristic of diode 80
60 IF (A)
TJ=125C
40
TJ=25C
20
0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4
Energy losses vs Collector Current 1 0.75 E (mJ) 0.5 0.25 0 0 20 40 IC (A) 60 80
VCE = 400V VGE = 15V RG = 2.5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1
0.75 E (mJ)
0.5
VCE = 400V VGE =15V IC = 30A TJ = 125C
0.25
0 0 2 4 6 8 Gate Resistance (ohms) 10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
8-8
APTGF50TL60T3G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
March, 2009

▲Up To Search▲

Price & Availability of APTGF50TL60T3G

	To Download APTGF50TL60T3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .